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Atomic-ordering-induced quantum phase transition between topological crystalline insulator and Z2 topological insulator

机译:原子有序诱导拓扑结构之间的量子相变   晶体绝缘体和Z2拓扑绝缘体

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摘要

Topological phase transition in a single material usually refers totransitions between a trivial band insulator and a topological Dirac phase, butthe transition may also occur between different classes of topological Diracphases. However, it is a fundamental challenge to realize quantum transitionbetween Z2 nontrivial topological insulator (TI) and topological crystallineinsulator (TCI) in one material because Z2 TI and TCI are hardly both co-existin a single material due to their contradictory requirement on the number ofband inversions. The Z2 TIs must have an odd number of band inversions over allthe time-reversal invariant momenta, whereas, the newly discovered TCIs, as adistinct class of the topological Dirac materials protected by the underlyingcrystalline symmetry, owns an even number of band inversions. Here, takePbSnTe2 alloy as an example, we show that at proper alloy composition theatomic-ordering is an effective way to tune the symmetry of the alloy so thatwe can electrically switch between TCI phase and Z2 TI phase when the alloy isordered from a random phase into a stable CuPt phase. Our results suggest thatatomic-ordering provides a new platform to switch between different topologicalphases.
机译:单一材料中的拓扑相变通常是指琐碎的带状绝缘子和拓扑狄拉克相之间的过渡,但是这种过渡也可能发生在不同类别的拓扑狄拉克相之间。然而,在一种材料中实现Z2非平凡的拓扑绝缘体(TI)和拓扑结晶绝缘体(TCI)之间的量子转换是一个根本性的挑战,因为Z2 TI和TCI几乎不共存于单一材料中,这是因为它们对带数的要求彼此矛盾。倒置。 Z2 TI在所有时间反转不变矩上必须具有奇数个带反转,而新发现的TCI作为受底层晶体对称性保护的拓扑Dirac材料的一类,具有偶数个带反转。在此,以PbSnTe2合金为例,我们表明在适当的合金组成下,原子序排列是调节合金对称性的有效方法,因此当合金从无规相变为有序相时,我们可以在TCI相和Z2 TI相之间进行电切换。稳定的CuPt相。我们的结果表明,原子顺序为在不同拓扑阶段之间切换提供了新平台。

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